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insulated gate bipolar transistor with ultrafast soft recovery diode features benefits absolute maximum ratings thermal resistance parameter min. typ. max. units r q jc junction-to-case - igbt CCC CCC 0.42 r q jc junction-to-case - diode CCC CCC 0.83 c/w r q cs case-to-sink, flat, greased surface CCC 0.24 CCC r q ja junction-to-ambient, typical socket mount CCC CCC 40 w t weight CCC 6 (0.21) CCC g (oz) z q jc transient thermal impedance junction-to-case (fig.24) 12/14/99 e g c irGP30B120KD-E motor control co-pack igbt pd- 93818 to-247ad n-channel www.irf.com 1 parameter max. units v ces collector-to-emitter breakdown voltage 1200 v i c @ t c = 25c continuous collector current (fig.1) 60 i c @ t c = 100c continuous collector current (fig.1) 30 i cm pulsed collector current (fig.3, fig. ct.5) 120 i lm clamped inductive load current (fig.4, fig. ct.2) 120 a i f @ t c = 100c diode continuous forward current 30 i fm diode maximum forward current 120 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation (fig.2) 300 p d @ t c = 100c maximum power dissipation (fig.2) 120 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case) c mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) w ? low v ce (on) non punch through (npt) technology ? low diode v f (1.76v typical @ 25a & 25c) ? 10 s short circuit capability ? square rbsoa ? ultrasoft diode recovery characteristics ? positive v ce (on) temperature coefficient ? extended lead to-247ad package ? benchmark efficiency for motor control applications ? rugged transient performance ? low emi ? significantly less snubber required ? excellent current sharing in parallel operation ? longer leads for easier mounting v ces = 1200v v ce(on) typ. = 2.28v v ge = 15v, i c = 25a, 25c
irGP30B120KD-E 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min. typ. max. units conditions fig. v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v,i c =250 a d v (b r )ce s / d tj temperature coeff. of breakdown voltage +1.2 v/c v ge = 0v, i c = 1 ma ( 25 -125 o c ) 2.28 2.48 i c = 25a, v ge = 15v 5, 6 collector-to-emitter saturation 2.46 2.66 i c = 30a, v ge = 15v 7, 9 v ce(on) voltage 3.43 4.00 v i c = 60a, v ge = 15v 10 2.74 3.10 i c = 25a, v ge = 15v, t j = 125c 11 2.98 3.35 i c = 30a, v ge = 15v, t j = 125c v ge(th) gate threshold voltage 4.0 5.0 6.0 v v ce = v ge , i c = 250 a 9,10,11,12 d v ge(th) / d tj temperature coeff. of threshold voltage - 1.2 mv/ o c v ce = v ge , i c = 1 ma ( 25 -125 o c ) g fe forward transconductance 14.8 16.9 19.0 s v ce = 50v, i c = 25a, pw =80s 250 v ge = 0v,v ce = 1200v i ces zero g ate voltage collector current 325 675 a v ge = 0v, v ce = 1200v, t j =125c 2000 v ge = 0v, v ce = 1200v, t j =150c 1.76 2.06 i c = 25a v fm diode forward voltage drop 1.86 2.17 v i c = 30a 8 1.87 2.18 i c = 25a, t j = 125c 2.01 2.40 i c = 30a, t j = 125c i ges gate-to-emitter leakage current 100 na v ge = 20v switchin g characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions fig. q g total gate charge (turn-on) 169 254 i c = 25a 23 q ge g ate - em itter charge (turn-on) 19 29 nc v cc =600v ct 1 q gc gate - collector charge (turn-on) 82 123 v ge = 15v e on turn-o n switching loss 1066 1250 i c = 25a, v cc = 600v ct 4 e off turn-off switching loss 1493 1800 j v ge = 15v, rg = 5 w, l=200h wf1 e tot total switching loss 2559 3050 t j = 25 o c, energy losses include tail and diode reverse recovery wf2 e on turn-on switching loss 1660 1856 ic =25a, v cc =600v 13, 15 e off turn-off switching loss 2118 2580 j v ge = 15v, rg = 5 w, l=200h ct 4 e tot total switching loss 3778 4436 t j = 125 o c, energy losses include tail and diode reverse recovery wf1 & 2 td(on) turn - on delay time 50 65 ic =25a, v cc =600v 14, 16 tr rise tim e 25 35 ns v ge = 15v, rg = 5 w, l=200h ct 4 td(off) turn - off delay time 210 230 t j = 125 o c, wf1 tf fall tim e 60 75 wf2 c ies input capacitance 2200 v ge = 0v c oes output capacitance 210 pf v cc = 30v 22 c res reverse transfer capacitance 85 f = 1.0 mhz t j =150 o c , ic = 120a 4 rbsoa reverse bias safe operating area full square v cc = 1000v, v p = 1200v ct 2 rg = 5 w , v ge = +15v to 0 v t j = 150 o c ct 3 scsoa short circuit safe operating area 10 ---- ---- s v cc = 900v,v p = 1200v wf4 rg = 5 w , v ge = +15v to 0 v e rec reverse recovery energy of the diode 1820 2400 j t j = 125 o c 17,18,19 trr diode reverse recovery time 300 ns v cc = 600v, ic = 25a 20, 21 irr peak reverse recovery current 34 38 a v ge = 15v, rg = 5 w, l=200h ct 4 , w f 3 le internal em itter inductance 13 nh measured 5 mm from the package.
irGP30B120KD-E www.irf.com 3 fig.1 - maximum dc collector current vs. case temperature 0 10 20 30 40 50 60 70 0 40 80 120 160 t c (c) i c ( a ) fig.2 - power dissipation vs. case temperature 0 40 80 120 160 200 240 280 320 0 40 80 120 160 t c (c) p t o t ( w ) fig.3 - forward soa t c =25c; tj < 150c 0.1 1 10 100 1000 1 10 100 1000 10000 v ce (v) i c ( a ) dc 10ms 1ms 100 s 10 s 2 s pulsed fig.4 - reverse bias soa tj = 150c, v ge = 15v 1 10 100 1000 1 10 100 1000 10000 v ce (v) i c ( a )
irGP30B120KD-E 4 www.irf.com fig.5 - typical igbt output characteristics tj= -40c; tp=300s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v) i c ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8v fig.6 - typical igbt output characteristics tj=25c; tp=300s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v) i c ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8v fig.7 - typical igbt output characteristics tj=125c; tp=300s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v) i c ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8v fig.8 - typical diode forward characteristic tp=300s 0 5 10 15 20 25 30 35 40 45 50 55 60 01234 v f (v) i f ( a ) - 40c 25c 125c
irGP30B120KD-E www.irf.com 5 fig.9 - typical v ce vs v ge tj= -40c 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 v ge (v) v c e ( v ) i ce =10a i ce =25a i ce =50a fig.12 - typ. transfer characteristics v ce =20v; tp=20 s 0 25 50 75 100 125 150 175 200 225 250 048121620 v ge (v) i c ( a ) tj=25c tj=125c tj=25c tj=125c fi g .10 - typical v ce vs v ge tj= 25c 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 v ge (v) v c e ( v ) i ce =10a i ce =25a i ce =50a fig.11 - typical v ce vs v ge tj= 125c 0 2 4 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 v ge (v) v c e ( v ) i ce =10a i ce =25a i ce =50a
irGP30B120KD-E 6 www.irf.com fig.16 - typical switching time vs rg tj=125c; l=200h; v ce =600v; i ce =25a; v ge =15v 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 55 rg (ohms) t ( n s ) tdon tdoff tr tf fig.13 - typical energy loss vs ic tj=125c; l=200h; v ce =600v; rg=22 w ; v ge =15v 0 1000 2000 3000 4000 5000 6000 7000 8000 0 102030405060 i c (a) e n e r g y ( j ) eon eoff fig.15 - typical energy loss vs rg tj=125c; l=200h; v ce =600v; i ce =25a; v ge =15v 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 0 5 10 15 20 25 30 35 40 45 50 55 rg (ohms) e n e r g y ( u j ) eon eoff fig.14 - typical switching time vs ic tj=125c; l=200h; v ce =600v; rg=22 w ;v ge =15v 10 100 1000 0 102030405060 i c (a) t ( n s ) tdon tdoff tf tr
irGP30B120KD-E www.irf.com 7 fig.20 - typical diode q rr v cc =600v; v ge =15v; tj=125c 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 0 500 1000 1500 di f / dt (a/s) q r r ( n c ) 51 w 22 w 10 w 5 w 50a 40a 30a 25a 20a fig.18 - typical diode i rr vs rg tj=125c; i f =25a 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45 50 55 rg (ohms) i r r ( a ) fig.17 - typical diode i rr vs i f tj=125c 0 5 10 15 20 25 30 35 40 45 0 102030405060 i f (a) i r r ( a ) rg=5 w rg=10 w rg=22 w rg=51 w fig.19 - typical diode i rr vs di f /dt v cc =600v; v ge =15v i f =25a; tj=125c 0 5 10 15 20 25 30 35 40 45 0 500 1000 1500 di f / dt (a/s) i r r ( a ) rg=22 w rg=51 w r g =10 w rg=5 w
irGP30B120KD-E 8 www.irf.com fig.21 - typ. diode e rec vs. i f tj=125c 800 1000 1200 1400 1600 1800 2000 2200 2400 0 102030405060 i f (a) e n e r g y ( u j ) 5 w 10 w 22 w 51 w fig.23 - typ. gate charge vs. v ge i c =25a; l=600h 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 q g , total gate charge (nc) v g e ( v ) 600v 800v fig.22 - typical capacitance vs v ce v ge =0v; f=1mhz 10 100 1000 10000 0 20406080100 v ce (v) c a p a c i t a n c e ( p f ) c ies c oes c res
irGP30B120KD-E www.irf.com 9 fig.24 - normalized transient thermal impedance, junction-to-case 0.001 0.01 0.1 1 10 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000 t 1 , rectangular pulse duration (sec) q single pulse 0.05 0.02 d =0.5 0.01 0 .2 0.1 notes: 1. duty factor d = t 1 / t 2 2. peak t j = p dm x z thjc + t c p dm t 1 t 2
irGP30B120KD-E 10 www.irf.com fig. ct.1 - gate charge circuit (turn-off) fig. ct.2 - rbsoa circuit fig. ct.3 - s.c. soa circuit l rg 80 v dut 1000v d c driver dut 900v fig. ct.4 - switching loss circuit 1k vcc dut 0 l l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm fig. ct.5 - resistive load circuit
irGP30B120KD-E www.irf.com 11 fig. wf.1 - typ. turn-off loss waveform @ tj=125c using fig. ct.4 fig. wf.2 - typ. turn-on loss waveform @ tj=125c using fig. ct.4 fig. wf.4 - typ. s.c. waveform @ t c =150c using fig. ct.3 fig. wf.3 - typ. diode recovery waveform @ tj=125c using fig. ct.4 0 200 400 600 800 1000 1200 -10 0 10 20 30 t i me (s) v c e ( v ) -50 0 50 100 150 200 250 i c e ( a ) -1200 -1000 -800 -600 -400 -200 0 -0.5 0.0 0.5 1.0 t i me (s) v c e ( v ) -30 -20 -10 0 10 20 30 i c e ( a ) peak i rr q rr t rr 10% peak i rr -100 0 100 200 300 400 500 600 700 800 900 4.0 4.1 4.2 4.3 4.4 4.5 t i me (s) v c e ( v ) -5 0 5 10 15 20 25 30 35 40 45 i c e ( a ) test current 90% test current 10% test current eon loss 5% v ce t r -100 0 100 200 300 400 500 600 700 800 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 t i me (s) v c e ( v ) -5 0 5 10 15 20 25 30 35 40 i c e ( a ) 90% i ce t f 5% v ce 5% i ce eoff loss
irGP30B120KD-E 12 www.irf.com to-247ad case outline and dimensions world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 12/99 d r g . n o :

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